Description :
1. High transition frequency: fT= 200 MHz (typ.)
2. Complementary to 2SA1930Absolute Maximum Ratings
Collector-base voltage : VCBO = 180 V
Collector-emitter voltage : VCEO = 180 V
Emitter-base voltage : VEBO = 5 V
Collector current : IC = 2 A
Base current : IB = 1 A
Power Amplifier Applications
Driver Stage Amplifier Applications
C5171 NPN Transistor Silicon Epitaxial Type
USh2,000Price