IRF1404 Seventh Generation HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.
 
Features:-
• Advanced process technology
• Ultra low on-resistance
• Dynamic dv/dt rating
• Fast switching
• Fully avalanche rated
• Automotive qualified (Q101)
 
Detailed Specifications:-
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Drain-Source Breakdown Voltage (Vds)
40V
Continuous Drain Current (Id)
202A
Drain-Source Resistance (Rds On)
4mOhms
Gate-Source Voltage (Vgs)
20V
Gate Charge (Qg)
196 nC
Operating Temperature Range
-55 - 175°C
Power Dissipation (Pd)
333W